nmos linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. the scanning circuit is made up of n-channel mos transistors, operates at low power consumption and is easy to handle. each photodiode has a large active area, high uv sensitivity yet very low noise, delivering a high s/n even at low light levels. the current output type nmos line ar image sensors also feature excellent output linearity and wide dynamic range. s3901-1024q uses photodiodes with a height of 2.5 mm, arrayed a t a spacing of 50 m. s3904-2048q has photodiodes with a height of 2.5 mm, arrayed at a spacing of 25 m. the photodiode arrays are available in 2 different pixel quantities, 1024 (s3901-1024q) and 2048 (s3904-2048q). quartz glass is the standard window material. features l large active area, long detection length pixel pitch: 50 m (s3901-1024q) 25 m (s3904-2048q) pixel height: 2.5 mm active area length: 51.2 mm l high uv sensitivity with good stability l low dark current and large saturation charge allow long integration time and a wide dynamic range at room temperature l excellent output linearity and sensitivity spatial uniformity l low power consumption: 1 mw max. l start pulse and clock pulses are cmos logic compatible applications l multichannel spectrophotometry l image readout system image sensor nmos linear image sensor large active area type with 51.2 mm detection length s3901-1024q , s3904-2048q c 1.0 m 1.0 m 400 m oxidation silicon n type silicon p type silicon s3901-1024q: a=50 m, b=45 m, c=2.5 mm s3904-2048q: a=25 m, b=20 m, c=2.5 mm b a vss start st clock clock 1 2 active photodiode saturation control gate saturation control drain dummy diode dummy video active video end of scan digital shift register (mos shift register) kmpdc0020ea equivalent circuit active area structure absolute maximum ratings parameter symbol value unit input pulse ( 1, 2, st) voltage v 15 v power consumption* 1 p 1 mw operating temperature* 2 topr -40 to +65 c storage temperature tstg -40 to +85 c *1: v =5.0 v *2: no condensation kmpda0124eb 1
nmos linear image sensor s3901-1024q, s3904-2048q shape specifications parameter s3901-1024q s3904-2048q unit number of pixels 1024 2048 - package length 65.0 mm number of pin 22 - window material* 3 quartz - weight 8.5 g *3: fiber optic plate is available. specifications (ta=25 c) s3901-1024q s3904-2048q parameter symbol min. typ. max. min. typ. max. unit pixel pitch - - 50 - - 25 - m pixel height - - 2.5 - - 2.5 - mm spectral response range (10% of peak) 200 to 1000 200 to 1000 nm peak sensitivity wavelength p - 600 - - 600 - nm photodiode dark current* 4 i d - 0.2 0.6 - 0.1 0.3 pa photodiode capacitance* 4 cph - 20 - - 10 - pf saturation exposure* 4 * 5 esat - 180 - - 180 - m lx s saturation output charge* 4 qsat - 50 - - 25 - pc photo response non-uniformity* 6 prnu - - 3 - - 3 % *4: vb=2.0 v, v =5.0 v *5: 2856 k, tungsten lamp *6: 50% of saturation, excluding the start pixel and last pixel electrical characteristics (ta=25 c) s3901-1024q s3904-2048q parameter symbol condition min. typ. max. min. typ. max. unit high v 1, v 2 (h) 4.5 5 10 4.5 5 10 v clock pulse ( 1, 2) voltage low v 1, v 2 (l) 0 - 0.4 0 - 0.4 v high v s (h) 4.5 v 1 10 4.5 v 1 10 v start pulse ( st) voltage low v s (l) 0 - 0.4 0 - 0.4 v video bias voltage* 7 vb 1.5 v - 3.0 v - 2.5 1.5 v - 3.0 v - 2.5 v saturation control gate voltage vscg - 0 - - 0 - v saturation control drain voltage vscd - vb - - vb - v clock pulse ( 1, 2) rise/fall tim e * 8 tr 1, tr 2 tf 1, tf 2 - 20 - - 20 - ns clock pulse ( 1, 2) pulse width tpw 1, tpw 2 200 - - 200 - - ns start pulse ( st) rise/fall time tr s, tf s - 20 - - 20 - ns start pulse ( st) pulse width tpw s 200 - - 200 - - ns start pulse ( st) and clock pulse ( 2) overlap t ov 200 - - 200 - - ns clock pulse space* 8 x 1 , x 2 trf - 20 - - trf - 20 - - ns data rate* 9 f 0.1 - 2000 0.1 - 2000 khz video delay time tvd 50% of saturation * 9 - 200 - - 250 - ns clock pulse ( 1, 2) line capacitance c 5 v bias - 134 - - 200 - pf saturation control gate (vscg) line capacitance cscg 5 v bias - 63 - - 87 - pf video line capacitance c v 2 v bias - 45 - - 60 - pf *7: v is input pulse voltage (refer to figure 8) . *8: trf is the clock pulse rise or fall time. a clock pulse space of ? rise time/fall time - 20 ? ns (nanoseconds) or more should be input if the clock pulse rise or fall time is longer than 20 ns (refer to figure 7) . *9: vb=2.0 v, v =5.0 v 2
nmos linear image sensor s3901-1024q, s3904-2048q dimensional outline (unit: mm) kmpdc0109ea pin connection kmpda0123eb 25.6 0.5 7.75 0.2 7.75 0.2 15.5 65.0 0.25 15.24 1.3 0.2* 3.0 chip surface * optical distance from the outer surface of the quartz window to the chip surface 2.54 0.46 25.4 48.26 active area 51.2 2.5 nc nc nc nc nc nc nc nc nc nc end of scan 1 2 3 4 5 6 7 8 9 10 11 22 21 20 19 18 17 16 15 14 13 12 2 1 st vss vscg nc vscd vss active video dummy video vsub vss, vsub and nc should be grounded. terminal input or output description 1, 2 input (cmos logic compatible) pulses for operating the mos shift register. the video data rate is equal to the clock pulse frequency since the video output signal is obtained synchronously with the rise of 2 pulse. st input (cmos logic compatible) pulse for starting the mos shift register operation. the time interval between start pulses is equal to the signal accumulation time. vss - connected to the anode of each photodiode. this should be grounded. vscg input used for restricting blooming. this should be grounded. vscd input used for restricting blooming. this should be biased at a voltage equal to the video bias voltage. active video output video output signal. connects to photodiode cathodes when the address is on. a positive voltage should be applied to the video line in order to use photodiodes with a reverse voltage. when the amplitude of ? resistor. this is a negative going pulse that appears synchronously with the 3
hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamats u.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152- 375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv?gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8 -509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese, (milano), italy, telephone: (39) 02-935-81 -733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(x)" which means tentative specifications or a suffix "(z)" which means developmental specifications. ?2010 hamamatsu photonics k.k. nmos linear image sensor s3901-1024q, s3904-2048q cat. no. kmpd1049e05 jul. 2010 dn tvd tpw 1 tpw 2 tpw s st v s (h) v s (l) v 1 (h) v 1 (l) v 2 (h) v 2 (l) 1 2 end of scan st 1 2 tr s tf s tr 1 tf 1 x1 x2 t ov tf 2 tr 2 active video output 10 ? 5 10 2 10 1 10 0 10 ? 1 10 ? 2 10 ? 3 10 ? 4 10 ? 3 10 ? 2 10 ? 1 10 0 output charge (pc) exposure ( lx s) (typ. vb=2 v, v =5 v, light source: 2856 k) saturation charge s3904-2048q s3901-1024q saturation exposure 0.3 0.2 0.1 0 200 400 600 800 1000 1200 wavelength (nm) photo sensitivity (a/w) (ta=25 ?c) 4 0 6 8 10 45678 10 clock pulse amplitude (v) video bias voltage (v) 2 9 min. video bias range max. recommended bias spectral response (typical example) output charge vs. exposure kmpdb0149ea kmpdb0160eb kmpdb0043ea timing chart video bias voltage margin kmpdc0022ea 4
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